HXY MOSFET MMDT3904V

HXY MOSFET · Transistors (BJTs) · MPN MMDT3904V

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation200mW
typeNPN
Number2 NPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃

Technical details

40V 300 NPN 2 NPN 200mA SOT-563 Single Bipolar Transistors RoHS

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