HXY MOSFET MJE340

HXY MOSFET · Transistors (BJTs) · MPN MJE340

No reviews yet — be the first to review HXY MOSFET MJE340.

Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO350V
DC Current Gain250
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation625mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

350V 250 1 NPN NPN 500mA TO-126 Single Bipolar Transistors RoHS

Related Transistors (BJTs)