HXY MOSFET · Transistors (BJTs) · MPN MJE13006-HXY
No reviews yet — be the first to review HXY MOSFET MJE13006-HXY.
| Current - Collector Cutoff | 100uA |
|---|---|
| Transition frequency(fT) | 4MHz |
| Collector - Emitter Voltage VCEO | 400V |
| Emitter-Base Voltage VEBO | 9V |
| DC Current Gain | 10 |
| Pd - Power Dissipation | 80W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 8A |
| Vce Saturation(VCE(sat)) | 3V |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor 400V 8A 4MHz 80W Through Hole TO-220