HXY MOSFET · Transistors (BJTs) · MPN MJE13003-HXY
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| Current - Collector Cutoff | 1mA |
|---|---|
| Transition frequency(fT) | 5MHz |
| Collector - Emitter Voltage VCEO | 500V |
| Emitter-Base Voltage VEBO | 9V |
| DC Current Gain | 40 |
| Pd - Power Dissipation | 1.25W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 1.5A |
| Vce Saturation(VCE(sat)) | 600mV |
| Operating Temperature | -55℃~+150℃ |
500V 40 1 NPN NPN 1.5A TO-126 Single Bipolar Transistors RoHS