HXY MOSFET MJD41C

HXY MOSFET · Transistors (BJTs) · MPN MJD41C

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain200
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

100V 200 1 NPN NPN 3A TO-252-2L Single Bipolar Transistors RoHS

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