HXY MOSFET · Transistors (BJTs) · MPN MJD127G-HXY
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| Current - Collector Cutoff | 1uA |
|---|---|
| Collector - Emitter Voltage VCEO | 100V |
| DC Current Gain | 8000 |
| Emitter-Base Voltage VEBO | 6V |
| Pd - Power Dissipation | 2W |
| type | PNP |
| Current - Collector(Ic) | 5A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.8V |
100V 8000 PNP 5A TO-252-2L Single Bipolar Transistors RoHS