HXY MOSFET KTD882-Y-U/PH-HXY

HXY MOSFET · Transistors (BJTs) · MPN KTD882-Y-U/PH-HXY

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)5MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation1.25W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

30V 300 1 NPN NPN 3A TO-126 Single Bipolar Transistors RoHS

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