HXY MOSFET KSB772YS-HXY

HXY MOSFET · Transistors (BJTs) · MPN KSB772YS-HXY

No reviews yet — be the first to review HXY MOSFET KSB772YS-HXY.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

30V 300 1 PNP PNP 3A TO-126 Single Bipolar Transistors RoHS

Related Transistors (BJTs)