HXY MOSFET HUMH9NTN

HXY MOSFET · Transistors (BJTs) · MPN HUMH9NTN

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Specifications

Transition frequency(fT)250MHz
DC Current Gain68
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV
Input Resistor13kΩ
typeNPN
Resistor Ratio5.7
Number2 NPN (Pre-Biased)
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)1.2V@1mA,300mV
Voltage - Input(Max)(VI(off))300mV@100uA,5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 100mA 150mW Surface Mount SOT-363

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