HXY MOSFET · Transistors (BJTs) · MPN HTDTA143ELM
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| Current - Collector Cutoff | - |
|---|---|
| Collector - Emitter Voltage VCEO | - |
| Transition frequency(fT) | 250MHz |
| Emitter-Base Voltage VEBO | - |
| DC Current Gain | 30 |
| Vce Saturation(VCE(sat)) | - |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 200mW |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 200mW Surface Mount SOT-23