HXY MOSFET · Transistors (BJTs) · MPN HRN1910LF
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| Current - Collector Cutoff | 0.5uA |
|---|---|
| Transition frequency(fT) | 250MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 100 |
| Vce Saturation(VCE(sat)) | 300mV |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
| Output Voltage(VO(on)) | - |
| Input Resistor | 6.11kΩ |
| Resistor Ratio | - |
| Pd - Power Dissipation | 150mW |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-363