HXY MOSFET HRN1101LXHF

HXY MOSFET · Transistors (BJTs) · MPN HRN1101LXHF

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO-
DC Current Gain20
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV
Input Resistor4.7kΩ
typeNPN
Number1 NPN (Pre-Biased)
Resistor Ratio10
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 150mW Surface Mount SOT-523

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