HXY MOSFET HMMBT3904WT1G

HXY MOSFET · Transistors (BJTs) · MPN HMMBT3904WT1G

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Specifications

Current - Collector Cutoff60nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain300
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation150mW
ConfigurationStandalone
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 40V 200mA 150mW Surface Mount SOT-323

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