HXY MOSFET HKRC406ERTKP

HXY MOSFET · Transistors (BJTs) · MPN HKRC406ERTKP

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Specifications

Transition frequency(fT)250MHz
DC Current Gain80
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV
Input Resistor6.11kΩ
typeNPN
Number1 NPN (Pre-Biased)
Resistor Ratio12
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV
Input Voltage (VI(on)@Ic,Vce)1.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 150mW Surface Mount SOT-523

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