HXY MOSFET HKRC118S

HXY MOSFET · Transistors (BJTs) · MPN HKRC118S

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Specifications

Transition frequency(fT)250MHz
DC Current Gain33
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor1.54kΩ
typeNPN
Number1 NPN (Pre-Biased)
Resistor Ratio5.5
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)3V@20mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 200mW Surface Mount SOT-23

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