HXY MOSFET HFMMT493TA

HXY MOSFET · Transistors (BJTs) · MPN HFMMT493TA

No reviews yet — be the first to review HXY MOSFET HFMMT493TA.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain60
Pd - Power Dissipation250mW
Configuration-
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor NPN+PNP 100V 1A 150MHz 250mW Surface Mount SOT-23

Related Transistors (BJTs)