HXY MOSFET · Transistors (BJTs) · MPN HDTD114ECT116
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| Transition frequency(fT) | 250MHz |
|---|---|
| DC Current Gain | 30 |
| Current - Collector(Ic) | 50mA |
| Operating Temperature | -55℃~+150℃ |
| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 13kΩ |
| type | NPN |
| Resistor Ratio | 1 |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 200mW |
| Voltage - Input(Max)(VI(off)) | 500mV |
| Input Voltage (VI(on)@Ic,Vce) | 3V |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 200mW Surface Mount SOT-23