HXY MOSFET · Zener & TVS Devices · MPN HBZT52C3V3E308
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| Pd - Power Dissipation | 500mW |
|---|---|
| Operating Junction Temperature Range | -40℃~+125℃ |
| Reverse Leakage Current (Ir) | 1uA@4V |
| Impedance(Zzt) | 90Ω |
| Diode Configuration | 1 Independent |
| Zener Voltage(Range) | 3.1V~3.5V |
| Zener Voltage(Nom) | 3.3V |
| Impedance(Zzk) | 570Ω |
Zener Diode Independent 3.3V 500mW Surface Mount SOD-123