HXY MOSFET HBZT52C2013F

HXY MOSFET · Zener & TVS Devices · MPN HBZT52C2013F

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Specifications

Pd - Power Dissipation500mW
Operating Junction Temperature Range-40℃~+125℃
Reverse Leakage Current (Ir)1uA@0.04V
Impedance(Zzt)52.2Ω
Diode Configuration1 Independent
Zener Voltage(Range)19V~21V
Zener Voltage(Nom)20V

Technical details

Zener Diode Independent 20V 500mW Surface Mount SOD-123

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