HXY MOSFET HBCP5316

HXY MOSFET · Transistors (BJTs) · MPN HBCP5316

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain25
Pd - Power Dissipation1.5W
Number1 PNP
typePNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 80V 1A 100MHz 1.5W Surface Mount SOT-223

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