HXY MOSFET DTC123JE

HXY MOSFET · Transistors (BJTs) · MPN DTC123JE

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain80
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV
Input Resistor2.2kΩ
Resistor Ratio26
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.1V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-523

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