HXY MOSFET · Transistors (BJTs) · MPN D882Y
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| Current - Collector Cutoff | 1uA |
|---|---|
| Transition frequency(fT) | 50MHz |
| Collector - Emitter Voltage VCEO | 30V |
| DC Current Gain | 300 |
| Emitter-Base Voltage VEBO | 6V |
| Pd - Power Dissipation | 1.25W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 3A |
| Vce Saturation(VCE(sat)) | 500mV |
| Operating Temperature | -55℃~+150℃ |
30V 300 1 NPN NPN 3A TO-126 Single Bipolar Transistors RoHS