HXY MOSFET D882

HXY MOSFET · Transistors (BJTs) · MPN D882

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO6V
DC Current Gain160
Pd - Power Dissipation500mW
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 30V 3A 50MHz 500mW Surface Mount SOT-89-3L

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