HXY MOSFET BZT52-B11X-HXY

HXY MOSFET · Zener & TVS Devices · MPN BZT52-B11X-HXY

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Specifications

Pd - Power Dissipation500mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)100nA@8V
Impedance(Zzt)20Ω
Diode Configuration1 Independent
Zener Voltage(Range)10.78V~11.22V
Zener Voltage(Nom)11V
Impedance(Zzk)150Ω

Technical details

500mW 1 Independent 10.78V~11.22V 11V SOD-123 Single Zener Diodes RoHS

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