HXY MOSFET · Transistors (BJTs) · MPN BD681
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| Current - Collector Cutoff | 1uA |
|---|---|
| Collector - Emitter Voltage VCEO | 100V |
| DC Current Gain | 8000 |
| Emitter-Base Voltage VEBO | 6V |
| Pd - Power Dissipation | 2W |
| Configuration | Standalone |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 4A |
| Vce Saturation(VCE(sat)) | 1.8V |
100V 8000 NPN 1 NPN 4A TO-126 Single Bipolar Transistors RoHS