HXY MOSFET BD238

HXY MOSFET · Transistors (BJTs) · MPN BD238

No reviews yet — be the first to review HXY MOSFET BD238.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain250
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

100V 250 1 PNP PNP 1.5A TO-126 Single Bipolar Transistors RoHS

Related Transistors (BJTs)