HXY MOSFET BD236STU-HXY

HXY MOSFET · Transistors (BJTs) · MPN BD236STU-HXY

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain250
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

60V 250 1 PNP PNP 2A TO-126 Single Bipolar Transistors RoHS

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