HXY MOSFET · Transistors (BJTs) · MPN BD137G-HXY
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 50MHz |
| Collector - Emitter Voltage VCEO | 60V |
| DC Current Gain | 25 |
| Emitter-Base Voltage VEBO | 6V |
| Pd - Power Dissipation | 1W |
| Configuration | Standalone |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 1.5A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 500mV |
60V 25 NPN 1 NPN 1.5A TO-126 Single Bipolar Transistors RoHS