HXY MOSFET · Transistors (BJTs) · MPN BC850BWE6327-HXY
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| Current - Collector Cutoff | 15nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 45V |
| DC Current Gain | 450 |
| Emitter-Base Voltage VEBO | 6V |
| Pd - Power Dissipation | 150mW |
| Configuration | Standalone |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
45V 450 NPN 1 NPN 100mA SOT-323 Single Bipolar Transistors RoHS