HXY MOSFET · Transistors (BJTs) · MPN 2SD669
No reviews yet — be the first to review HXY MOSFET 2SD669.
| Current - Collector Cutoff | 500nA |
|---|---|
| Transition frequency(fT) | 50MHz |
| Collector - Emitter Voltage VCEO | 150V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 250 |
| Pd - Power Dissipation | 1.6W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 1.5A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 500mV |
150V 250 1 NPN NPN 1.5A TO-126 Single Bipolar Transistors RoHS