HXY MOSFET 2SA1213

HXY MOSFET · Transistors (BJTs) · MPN 2SA1213

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain70
Pd - Power Dissipation500mW
Number1 PNP
typePNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 50V 2A 100MHz Surface Mount SOT-89

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