HXY MOSFET 2PD601ASW-HXY

HXY MOSFET · Transistors (BJTs) · MPN 2PD601ASW-HXY

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain600
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
ConfigurationStandalone
Number1 NPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor 50V 100mA 0.2W Surface Mount SOT-323

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