HXY MOSFET · Transistors (BJTs) · MPN 2N5551
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| Current - Collector Cutoff | 50nA |
|---|---|
| Transition frequency(fT) | 300MHz |
| Collector - Emitter Voltage VCEO | 160V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 240 |
| Pd - Power Dissipation | 625mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Vce Saturation(VCE(sat)) | 200mV |
| Operating Temperature | -65℃~+150℃ |
Bipolar (BJT) Transistor NPN 160V 0.6A 300MHz Through Hole TO-92