HXY MOSFET 13001

HXY MOSFET · Transistors (BJTs) · MPN 13001

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)8MHz
Collector - Emitter Voltage VCEO450V
Emitter-Base Voltage VEBO7V
DC Current Gain18
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 450V 200mA 8MHz Surface Mount SOT-23

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