Huixin MUN2232

Huixin · Transistors (BJTs) · MPN MUN2232

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain30
Vce Saturation(VCE(sat))250mV
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor4.7kΩ
Number1 NPN (Pre-Biased)
typeNPN
Resistor Ratio1
Pd - Power Dissipation246mW

Technical details

50V 30 100mA 1 NPN (Pre-Biased) NPN 246mW SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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