Huixin MMDTA114YE

Huixin · Transistors (BJTs) · MPN MMDTA114YE

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Specifications

Current - Collector Cutoff0.5uA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain68
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Input Resistor13kΩ
Number1 PNP Pre-Biased
typePNP
Resistor Ratio5.7
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)1.4V

Technical details

50V 68 100mA 1 PNP Pre-Biased PNP 150mW SOT-523 Single, Pre-Biased Bipolar Transistors RoHS

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