Huixin MMDT3906DW

Huixin · Transistors (BJTs) · MPN MMDT3906DW

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain300
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
typePNP
Number2 PNP
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))400mV

Technical details

40V 300 PNP 2 PNP 200mA SOT-363 Single Bipolar Transistors RoHS

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