Huixin · Transistors (BJTs) · MPN MMBT5401BD
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| Current - Collector Cutoff | 50nA |
|---|---|
| Transition frequency(fT) | 300MHz |
| Collector - Emitter Voltage VCEO | 150V |
| DC Current Gain | 240 |
| Emitter-Base Voltage VEBO | 5V |
| Pd - Power Dissipation | 300mW |
| type | PNP |
| Number | 2 PNP |
| Current - Collector(Ic) | 200mA |
| Vce Saturation(VCE(sat)) | 200mV |
| Operating Temperature | -55℃~+150℃ |
150V 240 PNP 2 PNP 200mA SOT-26 Single Bipolar Transistors RoHS