HTCSEMI HT2SC5200-RDZ

HTCSEMI · Transistors (BJTs) · MPN HT2SC5200-RDZ

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Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO250V
Emitter-Base Voltage VEBO5V
DC Current Gain60
Pd - Power Dissipation150W
Number1 NPN
typeNPN
Current - Collector(Ic)17A
Operating Temperature-50℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

250V 60 1 NPN NPN 17A TO-247-3 Single Bipolar Transistors RoHS

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