HTCSEMI HT2803ANZ

HTCSEMI · Transistors (BJTs) · MPN HT2803ANZ

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Specifications

Output Leakage Current(Icex)50uA
Input Capacitiance(Ci)15pF
Reverse Leakage Current (Ir)50uA
number of channels8
Input Current(on)0.93mA
typeBJT
Vce Saturation(VCE(sat))1.3V@500um,350mA
Voltage - Input(Max)30V
Voltage - Forward(Vf)2V
Current - Collector(Ic)500mA
Operating Temperature-40℃~+85℃

Technical details

8 BJT 500mA DIP-18 Bipolar Transistor Arrays RoHS

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