High Diode MMBT3904T

High Diode · Transistors (BJTs) · MPN MMBT3904T

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation150mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 40V 0.2A 300MHz 0.15W Surface Mount SOT-523

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