High Diode MMBT3904

High Diode · Transistors (BJTs) · MPN MMBT3904

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-23

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