HANSCHIP semiconductor ULN2002DRG

HANSCHIP semiconductor · Transistors (BJTs) · MPN ULN2002DRG

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Specifications

Output Leakage Current(Icex)50uA
Collector - Emitter Voltage VCEO50V
Reverse Leakage Current (Ir)50uA
number of channels5
Input Current(on)6.3mA
Voltage - Forward(Vf)1.4V
Voltage - Input(Max)30V
Current - Collector(Ic)500mA
Operating Temperature-40℃~+85℃

Technical details

50V 5 500mA SOP-14 Bipolar Transistor Arrays RoHS

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