GOODWORK SS8050-Y1

GOODWORK · Transistors (BJTs) · MPN SS8050-Y1

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain400
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

25V 400 1 NPN NPN 1.5A SOT-23 Single Bipolar Transistors RoHS

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