GOODWORK S8050T

GOODWORK · Transistors (BJTs) · MPN S8050T

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO25V
DC Current Gain120
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))600mV

Technical details

25V 120 1 NPN NPN 500mA SOT-523 Single Bipolar Transistors RoHS

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