GOODWORK MMDT5551

GOODWORK · Transistors (BJTs) · MPN MMDT5551

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation300mW
Configuration-
typeNPN
Number2 PNP
Current - Collector(Ic)600mA
Operating Temperature-
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor 150V 600mA 100MHz 300mW Surface Mount SOT-363

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