GOODWORK MJD122

GOODWORK · Transistors (BJTs) · MPN MJD122

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Specifications

Vbe Saturation(VBE(sat))4.5V
Current - Collector Cutoff10uA
Vbe On(VBE(on))2.8V
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain1000@4A,4V
Pd - Power Dissipation1.75W
typeNPN
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))2V@16mA,4A

Technical details

100V 1000@4A,4V NPN 8A TO-252 Single Bipolar Transistors RoHS

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