GOODWORK · Transistors (BJTs) · MPN MJD122
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| Vbe Saturation(VBE(sat)) | 4.5V |
|---|---|
| Current - Collector Cutoff | 10uA |
| Vbe On(VBE(on)) | 2.8V |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 1000@4A,4V |
| Pd - Power Dissipation | 1.75W |
| type | NPN |
| Current - Collector(Ic) | 8A |
| Vce Saturation(VCE(sat)) | 2V@16mA,4A |
100V 1000@4A,4V NPN 8A TO-252 Single Bipolar Transistors RoHS