GOODWORK DTC114EE

GOODWORK · Transistors (BJTs) · MPN DTC114EE

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Specifications

Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO50V
DC Current Gain30
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor10kΩ
Number1 NPN (Pre-Biased)
Resistor Ratio1
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)3V@10mA,0.3V
Voltage - Input(Max)(VI(off))500mV@100uA,5V

Technical details

30 100mA 1 NPN (Pre-Biased) 150mW SOT-523 Single, Pre-Biased Bipolar Transistors RoHS

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