GOODWORK 2L-MMBT5401

GOODWORK · Transistors (BJTs) · MPN 2L-MMBT5401

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO-
DC Current Gain300
Pd - Power Dissipation300mW
Configuration-
Number1 PNP
typePNP
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 160V 600mA 300mW Surface Mount SOT-23

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