GOODWORK 13009

GOODWORK · Transistors (BJTs) · MPN 13009

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO410V
Emitter-Base Voltage VEBO9V
DC Current Gain35
Pd - Power Dissipation80W
Number1 NPN
typeNPN
Current - Collector(Ic)12A
Vce Saturation(VCE(sat))3V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 410V 12A 4MHz 80W Through Hole TO-220AB

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